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Ordering number : ENN8106
CPH6612
N-Channel Silicon MOSFET
CPH6612
Features
* * * *
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions Ratings 20 12 2 8 0.8 150 --55 to +150 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 10 0.4 1.4 2.4 125 165 230 120 31 25 165 235 350 1.3 typ max Unit V A A V S m m m pF pF pF
Marking : FY
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2504 TS IM TB-00000652 No.8106-1/4
CPH6612
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0 Ratings min typ 9 29 18 22 2.3 0.5 0.75 0.94 1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions unit : mm 2238
0.2
Electrical Connection
2.9 6 5 4
0.6
0.15
6
5
4
0.05
1.6 2.8
1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1
Top view
1
2
0.4
0.7 0.9
0.2
3 0.95
0.6
1
2
3
1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 SANYO : CPH6
Switching Time Test Circuit
VIN 4V 0V VIN ID=1A RL=10 VDD=10V
D
PW=10s D.C.1%
VOUT
G
CPH6612 P.G 50
S
No.8106-2/4
CPH6612
1.0
ID -- VDS
10.0V 4.0V
2.5V
V
1.0
ID -- VGS
VDS=10V
0.9 0.8
1.8
0.8
Drain Current, ID -- A
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6
Drain Current, ID -- A
1.5V
0.6
0.4
Ta=7 5C
0 0.2 0.4 0.6 0.8 1.0
0.2
VGS=1.0V
0.7 0.8 0.9 1.0
0 1.2 1.4 1.6 1.8 2.0 IT06289 400
Drain-to-Source Voltage, VDS -- V
400
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
25 C
--25 C
IT06290
RDS(on) -- Ta
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
350 300
350 300 250 200 150 100 50 0 --60
0.5A
250 200 150 100 50 0 0 2 4 6 8 10 IT07171
ID=0.1A
1.0A
.1A, I D=0
=1.8 VGS
V
V =2.5 , VGS 0.5A I D= =4.0V , V GS =1.0A ID
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
yfs -- ID
Ambient Temperature, Ta -- C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IT07172
IF -- VSD
VGS=0
Forward Transfer Admittance, yfs -- S
VDS=10V
2
1.0 7 5
C 25 Ta=
C --25 C 75
Forward Current, IF -- A
3 2
0.1 0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
5 3
1.0 IT06293
7
0.01 0.4
0.5
Ta= 75 C 25 C --25 C
0.6 0.7 0.8
0.9
1.0
1.1
1.2
SW Time -- ID
VDD=10V VGS=4V
5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
IT06294
Switching Time, SW Time -- ns
2 100 7 5 3 2 10 7 5 3 2 0.01
Ciss, Coss, Crss -- pF
Ciss
100 7 5
tf
td(off)
td(on)
Coss
3 2
tr
Crss
10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0 2 4 6 8 10 12 14 16 18 20
Drain Current, ID -- A
IT07175
Drain-to-Source Voltage, VDS -- V
IT07176
No.8106-3/4
CPH6612
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 IT06297
VGS -- Qg
VDS=10V ID=2A Drain Current, ID -- A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ASO
IDP=8A ID=2A
10 m
10
<10s
0 s
Gate-to-Source Voltage, VGS -- V
1m
10
s
s
Operation in this area is limited by RDS(on).
0.01 0.01
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
D C
0m
n io at er op
s
25 a= (T C)
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT07177
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
on
0.6
ac
er
am
ic
bo
0.4
ar
d(
90
0m
m2 !0
0.2
.8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT07178
Note on usage : Since the CPH6612 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice.
PS No.8106-4/4

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